Advances in silicon carbide processing and applications / Stephen E. Saddow, Anant Agarwal, editors.

ISBN:

9781580537414

9781580537407

Title:

Advances in silicon carbide processing and applications / Stephen E. Saddow, Anant Agarwal, editors.

Author:

Saddow, Stephen E., editor.

Physical Description:

1 online resource (xiii, 212 pages) : illustrations.

Series:

Semiconductor materials and devices series

Contents:

1. Silicon Carbide Overview / Olle Kordina and Stephen E. Saddow -- 2. High-Temperature SiC-FET Chemical Gas Sensors / Anita Lloyd Spetz, Shinji Nakagomi, and Susan Savage -- 3. Silicon Carbide Technology and Power Electronics Applications / C. Wesley Tipton IV and Stephen B. Bayne -- 4. Advances in Selective Doping of SiC Via Ion Implantation / A. Hallen [and others] -- 5. Power SiC MOSFETS / I. Sankin and J.B. Casady -- 6. Power and RF BJTs in 4H-SiC : Device Design and Technology / Anant Agarwal, Sei-Hyung Ryu, and John Palmour.

Local Note:

eBooks on EBSCOhost

Subject Term:

Silicon carbide.

Semiconductors.

Added Author:

Saddow, Stephen E.,

Agarwal, Anant (Anant K.),

Format:

Electronic Resources

Electronic Access:

Click here to view

Publication Date:

2004

Publication Information:

Boston :

Artech House,

[2004]

Available:*

Shelf Number	Material Type	Copy	Shelf Location	Status
621.38152 22	1:E-BOOK	1	1:ONLINE	Searching... Unknown

Bound With These Titles

On Order

Summary

Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices.

Preface	p. xi
Acknowledgments	p. xiii
Chapter 1 Silicon Carbide Overview	p. 1
1.1 General Properties	p. 1
1.1.1 Mechanical and Chemical Properties	p. 2
1.1.2 Bandgap	p. 2
1.1.3 Critical Field	p. 2
1.1.4 Saturated Drift Velocity	p. 3
1.1.5 Thermal Conductivity	p. 3
1.1.6 Figures of Merit	p. 4
1.2 History	p. 4
1.2.1 Berzelius and Acheson	p. 4
1.2.2 The Discovery of Polytypism	p. 6
1.2.3 The First LED and the Lely Process	p. 6
1.2.4 The Lost Decades	p. 7
1.2.5 The Second Wave	p. 7
1.2.6 The Third Wave	p. 7
1.3 Crystalline Structure	p. 8
1.3.1 Basic Structure	p. 8
1.3.2 Polytpism	p. 8
1.3.3 Impurities in Different Polytypes	p. 9
1.4 Crystal Growth	p. 11
1.4.1 Seeded Sublimation Growth	p. 11
1.4.2 High Temperature Chemical Vapor Deposition	p. 14
1.5 Epitaxial Growth	p. 18
1.5.1 Chemical Vapor Deposition	p. 18
1.6 Defects	p. 21
1.6.1 Micropipes	p. 21
1.6.2 Stacking Faults	p. 22
1.7 Commercial Outlook	p. 22
1.7.1 High-Frequency Applications	p. 23
1.8 Summary	p. 25
References	p. 26
Chapter 2 High-Temperature SiC-FET Chemical Gas Sensors	p. 29
2.1 Introduction	p. 29
2.2 Detection Mechanism of Field-Effect Gas Sensors	p. 30
2.2.1 Gas Sensing Principle	p. 30
2.2.2 Detection of Different Molecules	p. 31
2.2.3 Influence of Oxygen	p. 34
2.2.4 Influence of Different Metals	p. 35
2.2.5 Influence of Temperature	p. 36
2.2.6 Sensor Arrays	p. 36
2.3 Field-Effect Chemical Gas Sensor Devices	p. 38
2.3.1 Capacitors	p. 38
2.3.2 Schottky Diodes	p. 38
2.3.3 The P-N Junction Diode	p. 43
2.3.4 Field-Effect Transistors	p. 44
2.4 Sensor Properties at Elevated Temperatures, Influence of Hydrogen	p. 49
2.4.1 Influence of Hydrogen on Capacitors	p. 50
2.4.2 Influence of Hydrogen on Schottky Diodes	p. 51
2.5 More Sensor Properties	p. 53
2.5.1 Speed of Response	p. 53
2.5.2 Long-Term Stability	p. 56
2.6 Experimental	p. 57
2.6.1 Sample Preparation	p. 57
2.6.2 Gate Metal Deposition	p. 57
2.6.3 Mounting	p. 58
2.6.4 Device Operation	p. 58
2.7 Applications	p. 59
2.7.1 Petrol Engine Exhausts	p. 59
2.7.2 Diesel Engine Exhausts	p. 60
2.7.3 Flue Gas Monitoring	p. 61
2.8 Outlook and Conclusions	p. 62
Acknowledgments	p. 63
References	p. 63
Chapter 3 Silicon Carbide Technology and Power Electronics Applications	p. 69
3.1 DC-DC Conversion	p. 69
3.1.1 SMPC Circuit Topologies and Operation	p. 70
3.1.2 Silicon Carbide Devices in SMPC Applications	p. 73
3.1.3 Other SiC Switches	p. 78
3.1.4 SiC AC-DC Inverter Example	p. 79
3.2 DC-AC Power Conversion	p. 80
3.2.1 DC-AC Power Inverter	p. 80
3.2.2 Inverter Control Techniques	p. 81
3.2.3 SiC DC-AC Inverter Example	p. 82
3.3 Pulsed-Power Applications	p. 91
3.3.1 Thyristor Basics	p. 92
3.3.2 Evaluation of SiC Thyristors for Pulsed-Power Switching	p. 94
3.4 Thermal Management and High-Voltage Packaging	p. 97
3.4.1 Hybrid Si-SiC Half-Bridge Module	p. 98
3.4.2 Implementation Analysis of a High-Voltage SiC Bridge Rectifier Module	p. 100
3.4.3 Electrostatic Analysis of a High-Voltage Package for SiC Devices	p. 103
3.5 Summary	p. 106
References	p. 106
Chapter 4 Advances in Selective Doping of SiC Via Ion Implantation	p. 109
4.1 Introduction	p. 109
4.2 As-Implanted Profiles	p. 114
4.2.1 Diagnostic Techniques	p. 114
4.2.2 Random Implants	p. 115
4.2.3 Channeled Implants	p. 124
4.3 Implant Annealing	p. 128
4.3.1 Annealing Concepts	p. 128
4.3.2 Silane Overpressure Annealing Process	p. 130
4.3.3 Implanted Ion Profiles After Annealing	p. 136
4.3.4 Defect Evolution	p. 140
4.3.5 Results of Electrical Activation	p. 143
4.4 Technology Barriers and Suggestions for Future Work	p. 147
References	p. 148
Chapter 5 Power SiC Mosfets	p. 155
5.1 Introduction	p. 155
5.2 SiC UMOSFET	p. 156
5.3 SiC DIMOSFET	p. 163
5.4 SiC LDMOS	p. 169
5.5 Summary and Future Development	p. 171
References	p. 172
Chapter 6 Power and RF BJTs in 4H-SiC: Device Design and Technology	p. 177
6.1 Introduction	p. 177
6.2 Device Structures and Operation of Power BJTs	p. 177
6.3 Design of the Epitaxial Power BJT	p. 181
6.3.1 Design of the Collector Layer	p. 181
6.3.2 Design of the Base Layer	p. 183
6.3.3 Design of the Unit Cell	p. 184
6.4 Process Integration	p. 186
6.4.1 Process Sequence	p. 186
6.5 1.2-kV Power BJTs	p. 188
6.6 Design and Fabrication of UHF Transistors	p. 192

Available:*

Bound With These Titles

On Order

Summary

Summary

Table of Contents