Preface | p. xi |
Acknowledgments | p. xiii |
Chapter 1 Silicon Carbide Overview | p. 1 |
1.1 General Properties | p. 1 |
1.1.1 Mechanical and Chemical Properties | p. 2 |
1.1.2 Bandgap | p. 2 |
1.1.3 Critical Field | p. 2 |
1.1.4 Saturated Drift Velocity | p. 3 |
1.1.5 Thermal Conductivity | p. 3 |
1.1.6 Figures of Merit | p. 4 |
1.2 History | p. 4 |
1.2.1 Berzelius and Acheson | p. 4 |
1.2.2 The Discovery of Polytypism | p. 6 |
1.2.3 The First LED and the Lely Process | p. 6 |
1.2.4 The Lost Decades | p. 7 |
1.2.5 The Second Wave | p. 7 |
1.2.6 The Third Wave | p. 7 |
1.3 Crystalline Structure | p. 8 |
1.3.1 Basic Structure | p. 8 |
1.3.2 Polytpism | p. 8 |
1.3.3 Impurities in Different Polytypes | p. 9 |
1.4 Crystal Growth | p. 11 |
1.4.1 Seeded Sublimation Growth | p. 11 |
1.4.2 High Temperature Chemical Vapor Deposition | p. 14 |
1.5 Epitaxial Growth | p. 18 |
1.5.1 Chemical Vapor Deposition | p. 18 |
1.6 Defects | p. 21 |
1.6.1 Micropipes | p. 21 |
1.6.2 Stacking Faults | p. 22 |
1.7 Commercial Outlook | p. 22 |
1.7.1 High-Frequency Applications | p. 23 |
1.8 Summary | p. 25 |
References | p. 26 |
Chapter 2 High-Temperature SiC-FET Chemical Gas Sensors | p. 29 |
2.1 Introduction | p. 29 |
2.2 Detection Mechanism of Field-Effect Gas Sensors | p. 30 |
2.2.1 Gas Sensing Principle | p. 30 |
2.2.2 Detection of Different Molecules | p. 31 |
2.2.3 Influence of Oxygen | p. 34 |
2.2.4 Influence of Different Metals | p. 35 |
2.2.5 Influence of Temperature | p. 36 |
2.2.6 Sensor Arrays | p. 36 |
2.3 Field-Effect Chemical Gas Sensor Devices | p. 38 |
2.3.1 Capacitors | p. 38 |
2.3.2 Schottky Diodes | p. 38 |
2.3.3 The P-N Junction Diode | p. 43 |
2.3.4 Field-Effect Transistors | p. 44 |
2.4 Sensor Properties at Elevated Temperatures, Influence of Hydrogen | p. 49 |
2.4.1 Influence of Hydrogen on Capacitors | p. 50 |
2.4.2 Influence of Hydrogen on Schottky Diodes | p. 51 |
2.5 More Sensor Properties | p. 53 |
2.5.1 Speed of Response | p. 53 |
2.5.2 Long-Term Stability | p. 56 |
2.6 Experimental | p. 57 |
2.6.1 Sample Preparation | p. 57 |
2.6.2 Gate Metal Deposition | p. 57 |
2.6.3 Mounting | p. 58 |
2.6.4 Device Operation | p. 58 |
2.7 Applications | p. 59 |
2.7.1 Petrol Engine Exhausts | p. 59 |
2.7.2 Diesel Engine Exhausts | p. 60 |
2.7.3 Flue Gas Monitoring | p. 61 |
2.8 Outlook and Conclusions | p. 62 |
Acknowledgments | p. 63 |
References | p. 63 |
Chapter 3 Silicon Carbide Technology and Power Electronics Applications | p. 69 |
3.1 DC-DC Conversion | p. 69 |
3.1.1 SMPC Circuit Topologies and Operation | p. 70 |
3.1.2 Silicon Carbide Devices in SMPC Applications | p. 73 |
3.1.3 Other SiC Switches | p. 78 |
3.1.4 SiC AC-DC Inverter Example | p. 79 |
3.2 DC-AC Power Conversion | p. 80 |
3.2.1 DC-AC Power Inverter | p. 80 |
3.2.2 Inverter Control Techniques | p. 81 |
3.2.3 SiC DC-AC Inverter Example | p. 82 |
3.3 Pulsed-Power Applications | p. 91 |
3.3.1 Thyristor Basics | p. 92 |
3.3.2 Evaluation of SiC Thyristors for Pulsed-Power Switching | p. 94 |
3.4 Thermal Management and High-Voltage Packaging | p. 97 |
3.4.1 Hybrid Si-SiC Half-Bridge Module | p. 98 |
3.4.2 Implementation Analysis of a High-Voltage SiC Bridge Rectifier Module | p. 100 |
3.4.3 Electrostatic Analysis of a High-Voltage Package for SiC Devices | p. 103 |
3.5 Summary | p. 106 |
References | p. 106 |
Chapter 4 Advances in Selective Doping of SiC Via Ion Implantation | p. 109 |
4.1 Introduction | p. 109 |
4.2 As-Implanted Profiles | p. 114 |
4.2.1 Diagnostic Techniques | p. 114 |
4.2.2 Random Implants | p. 115 |
4.2.3 Channeled Implants | p. 124 |
4.3 Implant Annealing | p. 128 |
4.3.1 Annealing Concepts | p. 128 |
4.3.2 Silane Overpressure Annealing Process | p. 130 |
4.3.3 Implanted Ion Profiles After Annealing | p. 136 |
4.3.4 Defect Evolution | p. 140 |
4.3.5 Results of Electrical Activation | p. 143 |
4.4 Technology Barriers and Suggestions for Future Work | p. 147 |
References | p. 148 |
Chapter 5 Power SiC Mosfets | p. 155 |
5.1 Introduction | p. 155 |
5.2 SiC UMOSFET | p. 156 |
5.3 SiC DIMOSFET | p. 163 |
5.4 SiC LDMOS | p. 169 |
5.5 Summary and Future Development | p. 171 |
References | p. 172 |
Chapter 6 Power and RF BJTs in 4H-SiC: Device Design and Technology | p. 177 |
6.1 Introduction | p. 177 |
6.2 Device Structures and Operation of Power BJTs | p. 177 |
6.3 Design of the Epitaxial Power BJT | p. 181 |
6.3.1 Design of the Collector Layer | p. 181 |
6.3.2 Design of the Base Layer | p. 183 |
6.3.3 Design of the Unit Cell | p. 184 |
6.4 Process Integration | p. 186 |
6.4.1 Process Sequence | p. 186 |
6.5 1.2-kV Power BJTs | p. 188 |
6.6 Design and Fabrication of UHF Transistors | p. 192 |